Home > Ailing Ji (纪爱玲)

Ailing Ji (纪爱玲)

9

Dr. Ailing Ji   

Associate Professor   

Office: M-716  

Phone: +86-10-82649441   

Email:  alji@aphy.iphy.ac.cn   

 

Education: 

Sept 1996 - July 2000, BS Degree in Physics, Qufu Normal University 

Sept 2000 - July 2003, MS Degree in Material Engineering, Institute of Metal Research, CAS 

Sept 2003 - July 2006, PhD Degree in Condensed Matter Physics, Institute of Physics, CAS 

  

Work Experience: 

July 2006 - July 2008, Post doctor in City university of Hong Kong 

  

Research Interest: 

* Semiconductor thin films

* Superhard materials

* Silicon-based light-emitting materials

* Stress engineering 

  

Publications: 

 1. A.L. Ji, W. Wang, G.H. Song, Q.M. Wang, C. Sun, L.S. Wen, Microstructures and mechanical properties of chromium oxide films by are ion plating, Materials Letters 58 (2004) 1993–1998. 

2. A.L. Ji, L.B. Ma, C. Liu, P. Zheng, C. R. Li, and Z.X. Cao, Nanoindentation and Photoreflectance Study on Polycrystalline Ternary Al-C-N Thin Films, Appl. Phys. Lett. 86, 021918 (2005). 

3. A.L. Ji, L.B. Ma, C. Liu, C.R. Li, Z.X. Cao, Synthesis and Characterization of Superhard Aluminum Carbonitride Thin Films, Diamond and Relat. Mater. 14, 14/8, 1348-1352 (2005). 

4. A.L. Ji, Y. Du, L. B. Ma, and Z.X. Cao, Effect of substrate temperature on growth of Al-C-N thin films by reactive magnetron sputtering, J.Cryst.Growth279, 420-424 (2005). 

5. A.L. Ji, C.R. Li, Y. Du, L.B. Ma, R. Song, R. Huang, Z.X. Cao, Formation of rosette pattern in copper nitride thin films via nanocrystals gliding. Nanotechnology 16 (2005) 2092. 

6. A.L. Ji, R. Huang, Y. Du, C.R. Li, Y.Q. Wang, Z.X. Cao, Growth of stoichiometrical Cu3N thin films by reactive magnetron sputtering. J. Crystal Growth 295 (2006) 79. 

7. A.L. Ji, C.R. Li, Z.X. Cao, Ternary Cu3NPdx exhibiting invariant electrical resistivity over 200 K. Appl. Phys. Lett. 89 (2006) 252120. 

8. A.L. Ji, Y. Du, C.R. Li, Y.Q. Wang, Z.X. Cao, Orogenic movement of mechanism for the formation of symmetrical relief features in copper nitride thin films. J. Vac. Sci. Technol. B25 (2007)208.