Personal data

Sex: Male

Date of Birth: October 20, 1973

Place of Birth; Fujian Province, China

Marital Condition: Married, has one daughter.

Education

September 1991 – July 1995:

Department of Physics, Zhejiang University, Hanzhou, China.

B.S. in Condense Matter Physics, July 1995.

July 1995 – February 2000:

Institute of Physics, Chinese Academy of Sciences, Beijing.

Ph.D. in Condense Matter Physics, February 2000, Advisor: Prof. E.G. Wang.

Dissertation: Syntheses and field electron emission study of nanocrystalline diamond films

Research and experiences

July 1995-Feburary 2000:

I worked as a Ph.D student in the State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences in Beijing, China. My thesis advisor was Professor Enge Wang.

My research project was the growth of nanocrystalline diamond thin films by chemical vapour deposition (CVD), in particular by electron cyclotron resonance (ECR) plasma- assisted CVD which in the first year of my doctoral degree study. For preparing nanocrystalline diamond films I developed a new CVD method for diamond growth, using CH₄＋N₂ as the feedstock gases instead of the conventional CH₄＋N₂, while a small amount of H₂ gas can be introduced for a fine control of the diamond crystallite size ranging from 5nm to 50 nm. The microstructure of as-prepared nanocrystalline diamond films were characterized by XRD and Raman, and excellent field electron emission properties were found in the nanocrystalline diamond films, which were associated with their unique microstructure [see publications 2, 3, 4, 5, 7, 8].

April 2000-December 2003:

After receiving my doctoral degree in condensed matter physics, I went to Japan, as a postdoctoral fellow, to join the in the Surface Science Division of the Institute for Materials research (IMR), Tohoku University. My advisor was Professor Toshio Sakurai.

In this period I changed my research field from material science to surface physics, with the major research tooling being the scanning tunneling microscopy (STM). My research interest included: (1) the atomic scale study of the adsorption structure of metals on semiconductor surfaces such as Si(111)-7x7 and GaN(0001). One of my main works was the study of adsorption dynamics of alkali metals (AM) on the Si(111)-7x7 surface, where I revealed their unique adsorption mechanism in contrast to the common belief that AM atoms will react with Si dangling bonds similar like the atomic hydrogen [see publications 12, 14, 15, 16, 17]. (2) MBE growth of GaN thin films and its surface reconstructions [see publication 11].

December 2003 – December 2004:

I worked as a research associate in the same institute, but shifted to another department, the International Frontier Center for Advanced Materials (IFCAM), in a new group with Professor Mingwei Chen.

In this period I shift my research activity away from the surface science to material science. I have worked in the characterization of the phase transitions in pressurized silicon nanostructures, and the dynamic response of nanostructured metal alloys to nanoindentation [see publication 25].

January 2005 - present:

Supported by the “Bairen plan” of CAS, I came back to the state key lab for surface physics, institute of physics, Chinese Academy of Sciences as a professor.

I set up my own research group and planned to start the most important research career for the next ten to twenty years. I came back to my favorite study, surface science, with the major research tools being STM, HREELS, PES and a few other characterization techniques. While keeping my main interest in fundamental researches, I am also trying to broaden my research field to include more applications, especially for nano-sensors, optoelectronic devices and energy storage materials in the coming years.

The current research projects in my group are as follow:

1) [2005-present]: MBE growth of low-dimensional structures on semiconductor surfaces. These structures are the subject of EELS, XPS and STM studied. We are interested in the surface plasmon excitation and dispersion in these structures [see publications 18, 20, 23, 24, 26, 28, 30, and more papers are coming].

2) [2006-present]: Self-assembly of organic molecules on solid surfaces and single molecular physics [see publications 27, 29, and more papers are coming].

3) [2007-present]: MBE growth of oxides [just at the beginning].

4) [2007-present]: Scanning probe machinery [supported by national 973 project, an all home made LT-STM with high magnetic field is being bulit].

September 2007 – December 2007

Visiting professor, Institute for Materials Research, Tohoku Univ., Japan.

PUBLICATIONS

30. Ying Jiang, Kehui Wu, Jie Ma, Biao Wu, E. G. Wang, and Ph. Ebert

“Importance of quantum size effects in the non-metal to metal transition of two-dimensional Al islands”

Physical Review B, 76, 235434(2007).

29. Jing Teng, Kehui Wu, Jiandong Guo, and Enge Wang

“Scanning-induced structure transformation between self- assembled phases of pentacene on Ag/Si(111)”

Surface Science 602, 358(2008).

28. Ying Jiang, Y.-H. Kim, S. B. Zhang, Philipp Ebert, Shenyuan Yang, Zhe Tang, Kehui Wu, and E. G. Wang,

“Growing extremely thin bulklike metal film on a semiconductor surface: monolayer Al(111) on Si(111)”

Applied Physics Letters 91,181902(2007).

27. Jing Teng, Jiandong Guo, Kehui Wu and Enge Wang,

“Temperature and coverage driven condensation of pentacene on the Si(111)-(√3 × √3)R30◦–Ag surface”

J. Physics Cond. Matt. 19, 356005(2007).

26. Zhe Tang, Jing Teng, Ying Jiang, JinFeng Jia, Jiandong Guo, and Kehui Wu

“Reducing the critical thickness of epitaxial Ag film on the Si(111) substrate by introducing a monolayer Al buffer layer”

J. Applied Physics, 102, 053504 (2007).

25. Kehui Wu, X. Q. Yan, and M. W. Chen,

“In situ Raman characterization of reversible phase transition in stress-induced amorphous silicon”

Applied Physics Letters 91, 101903(2007).

24. Ying Jiang, Kehui Wu, Zhe Tang, Ph. Ebert, and E. G. Wang

“Quantum size effect induced dilute atomic layers in ultrathin Al films”

Physical Review B 76, 035409 (2007).

23. Yinghui Yu, Zhe Tang, Ying Jiang, Kehui Wu, and Enge Wang,

“Thickness dependence of the surface plasmon dispersion in ultrathin aluminum films on silicon”,

Surface Science 600, 4966( 2006).

22. Huang XM, Wu KH, Chen MW, et al.
“Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping”,
Mater. Sci. in Semicond. Processing 9 (1-3): 257-260 (2006)

21. Y. W. Ma, X.P. Zhang, A. X. Xu, X. H. Li, L. Xiao, G. Nishijima, S. Awaji, K. Watanabe, Y. L. Jiao, L. Xiao, X. D. Bai, K. H. Wu, and H. H. Wen,

“The effect of ZrSi2 and SiC doping on the microstructure and Jc–B properties of PIT processed MgB2 tapes”,

Supercond. Sci. Technol. Vol. 19, pp133–137 (2006).

20. J. Z. Wang, K. H. Wu, W. S. Yang, X. J. Wang, J. T. Sadowski, Y. Fujikawa, and T. Sakurai,

“Structural transition of pentacene monolayer on Ga bilayer: From brick-wall structure to herringbone pattern of molecular dimmers”,

Surface Science Vol. 579 (1), pp80-88 (2005).

19. X. M. Huang, S. J. Koh, K. H. Wu, M. W. Chen, T. Hoshikawa, K. Hoshikawa, and S. Uda,

“Reaction at the interface between Si melt and a Ba-doped silica crucible”,

J. Cryst. Growth Vol. 277 (1-4), pp154-161(2005).

18. Y. H. Yu, Y. Jiang, Z. Tang, Q. L. Guo, J. F. Jia, Q. K. Xue, K. H. Wu, and E. G. Wang,

“Thickness dependence of surface plasmon damping and dispersion in ultrathin Ag films”,

Physical Review B Vol. 72, 205405(2005).

17. Kehui Wu, Y. Fujikawa, Y. Takamua, and T. Sakurai,

“Alkali metals adsorption on the Si(111)-(7x7) surface,”

Chinese J. Phys. Vol. 43, pp197-211(2005).

16. Kehui Wu

“Unusual diffusivity and clustering of alkali metals on the Si(111)-7x7 surface”,

Sci. Techno. Adv. Mater. Vol. 6, pp789-194(2005).

15. Kehui Wu, Y. Fujikawa, T. Briere, V. Kumar, Y. Kawazoe, and T. Sakurai,

“Dynamics and nano-clustering of alkali metals (Na, K) on the Si(111)-(7x7) surface,”

Ultramicroscopy Vol. 105, pp32-41(2005).

14. Kehui Wu, A. I. Oreshkin, Y. Takamura, Y. Fujikawa, T. Nagao, T.Briere, V. Kumar, Y. Kawazoe, R. F. Dou, Q. K. Xue and T. Sakurai,

“Step-by-step cooling of a two-dimensional Na gas on the Si(111)-(7x7) surface”,

Physical Review B Vol 70, 12071(2004).

13. R. Z. Bakhtizin, Q. Z. Xue, Q. K. Xue, K. H. Wu and T. Sakurai,

“Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth,”

Physics Uspekhi Vol. 47, No. 4, 371 (2004).

12. Kehui Wu, Y. Fujikawa, T. Nagao, Y. Hasegawa, K.S. Nakayama, Q. K. Xue, E. G. Wang, S. B. Zhang, T. Briere, V. Kumar, Y. Kawazoe, and T. Sakurai,

“Na adsorption on the Si(111)-(7x7): From two dimensional gas to nanocluster Array,”

Physical Review Letters. Vol. 91, No. 12, 126101(2003).

11. Kehui Wu, Q. Z. Xue, R. Z. Bakhtizin, Y. Fujikawa, X. Li, T. Nagao, Q. K. Xue and T. Sakurai,

“Layer-by-layer growth of Ag on GaN(0001) surface,”

Applied Physics Letters. Vol. 82, No. 9, 1389 (2003).

10. R. Z. Bakhtizin, K. H. Wu, Q. Z. Xue, Q. K. Xue, T. Nagao, and T. Sakurai,

“STM study of Ag film initial stages growth on a GaN(0001) surface grown by MBE,”

Phys. Low-Dimensional Structures Vol. 3-4, 21 (2003).

9. N. S. Maslova, V. I. Panov, K. H. Wu, Q. Z. Xue, T. Nagao, and A. I. Oreshkin,

“Tunneling Conductivity Features of the New Reconstructed Phases on the GaN(0001) Surface,”

JETP Letters Vol. 78, No. 9, 578(2003).

8. Kehui Wu, X. R. Wang, S. Liu, E. G. Wang,

“Bistable characteristic and current jumps in field electron emission of nanocrystalline diamond films”,

J. Appl. Phys. Vol. 90, No. 9, 4810 (2001).

7. Kehui Wu, E. G. Wang, Z. X. Cao, Z. L. Wang, X. Jiang,

“Microstructure and its effect on field electron emission of grain-size-controlled nanocrystalline diamond films”,

J. Appl. Phys. Vol. 88, No. 5, 2967 (2000).

6. J.W. Liu, F.Q. Xie, Q.Z. Zhang, K.H. Wu, X.C. Ma, E.G. Wang, and W.X. Liu,

“Investigations of Fuch-Kliewer phonons and hydrogen adsorption of 6H-SiC surfaces by high-resolution electron-energy-loss spectroscopy,”

Thin Solid Films Vol. 375, no. 1, 77(2000).

5. N.S. Xu, J. Chen, S. Z. Deng, K. H. Wu and E. G. Wang,

“Study of field electron emission from nanocrystalline diamond thin films grown from a N₂/CH₄ microwave plasma,”

J. Physics D Vol. 33, no. 13, 1572(2000).

4. Kehui Wu, E.G.Wang, J.Chen and N.S.Xu,

“Nitrogen-incorporated distorted nanocrystalline diamond films: structure and field emission properties,”

J. Vac. Sci. Technol. B Vol. 17, No. 3, 1059 (1999).

3. J. Chen, S.Z.Deng, N.S.Xu, K. H. Wu and E.G.Wang,

“Observation of a new type of field-induced electron emission from a diamond-based heterostructures,”

Appl. Phys. Lett. Vol. 75, No. 9, 1323 (1999).

2. Kehui Wu, E. G. Wang, Jian Qing, Guichang Xu,

“Electron resonance cyclotron resonance assist growth of carbon nitrogen films on diamond,”

J. Applied Physics Vol. 83, No. 3, 1072 (1998).

1. J.L.Li, Ge Meng, K. H. Wu and E.G.Wang,

“Highly oriented diamond film growth by atomic force microscopy”,

Chinese Phys. Lett. Vol. 15, 822 (1998).

Conference Presentations, Seminars, and Invited Talks

(1) “Au-induced superstructures on the GaN(0001) surface”, seminar, Institute of Physics, Chinese Academy of Sciences, Beijing, China, Jan. 2001

(2) “Mobile Alkali Metal Atoms and Magic Clusters on the Si(111)-7x7 Surface” , contributed poster, APSIC’02, Tokyo, Oct. 2002

(4) “AM Adsorption on the Si(111)-(7x7) Surface: From a Two Dimensional Gas to Magic Clusters”, Contributed talk, STM’03, Eindhoven, the Netherlands, July 21-26, 2003.

(5) “AM Adsorption on the Si(111)-(7x7) Surface: From a Two Dimensional Gas to Magic Clusters” , Invited talk, Dr. Rohrer’s JSPS Award Workshop III and ISSP International Workshop, ISSP, University of Tokyo, Kashiwa, Japan, Feb. 2003

(6) “Atomic control of the formation of low-dimensional metal structures”, Invited talk, 3rd CAS-KIST Joint Conference, Nov. 15-17, 2006, Beijing, China.

(6) “Al thin film structure engineering by quantum size effects”, Invited talk, ChinaNano 2007, June 5-7, Beijing 2007.

(7) “Structure engineering of Al films on Si”, Invited talk, Sino-Italy Joint Workshop, June 25-27, Beijing, China 2007.