Recent Publication

The Main Research Area of Our Group:
Growth, Control and Quantum Effects of Low-dimensional Nanostructures

Review papers and Proceeding Editoring

 

1. Q. K. Xue, T. Hashizume, and T. Sakurai, "Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surface", in Advances in Scanning Tunneling Microscopy, Springer Press, Chapter 8, p194-282 (2000) (Book Chapter).  

2. Proc. of The 3rd Asia-Pacific Surface and Interface Analysis Conference (Beijing, Oct. 23-26), Surface and Interface Analysis Vol. 32, p1-p313 (Wiley Publication Ltd.), Editors: J. F. Watts and Qi-Kun Xue.

3. Q.K. Xue, T. Hashizume, and T. Sakurai, "Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surface", Progress in Surface Science 56, P1-P132 (1997) (review paper).

4. T. Sakurai, X.D. Wang, Q.K. Xue, Y. Hasegawa, T. Hashizume, H. Shinohara, "Scanning Tunneling Microscopy Study of Fullerenes", Progress in Surface Science 51, P263-P408 (1996) (review paper).

 

PUBLICATION LIST (As of Nov.11, 2003):

1. P. Zhang, Q. K. Xue, and X. C. Xie, "Spin current through a quantum dot in the presence of an oscillating magnetic field", Phys. Rev. Lett. 91, 196602 (2003).
2. Kehui Wu, Y. Fujikawa, T. Nagao, Y. Hasegawa, K. S. Nakayama, Q. K. Xue, E. G. Wang, T. Briere, V. Kumar, Y. Kawazoe, S. B. Zhang, and T. Sakurai, "Na adsorption on the Si(111)-7x7 surface: From two-dimensional gas to nanocluster array", Phys. Rev. Lett. 91, 126101 (2003).
3. Ping Zhang, C. K. Chan, Qi-Kun Xue, and Xian-Geng Zhao, "Quantum entanglement of excitons in coupled quantum dots", Phys. Rev. A 67, 012312 (2003).
4. R. Z. Bakhtizin, K. H. Wu, Q. Z. Xue, Q. K. Xue, T. Nagao, T. Sakurai, "STM study of Ag film initial stages growth on a GaN(0001) surface grown by MBE", Physics of low-dimensional structures 3-4, 21-29 (2003).
5. L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue, S. C. Chen, "Growth of nanoscale InGaN self-assembled quantum dots", J. Cryst. Growth 249, 144-148 (2003).
6. H. L. Sun, Q. T. Shen, J. F. Jia, Q. Z. Zhang, and Q. K. Xue, "Scanning tunneling microscopy study of superlattice domain boundaries on graphite surface", Surface Science 542, 94-100 (2003)
7. Wende Xiao, Qinlin Guo, Qikun Xue and E. G. Wang, "Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement", J. Appl. Phys. 94, 4847-4852 (2003).
8. L. W. Ji, Y. K. Su, S. J. Chang, S. H. Liu, C. K. Wang, S. T. Tsai, T. H. Fang, L. W. Wu, Q. K. Xue, "InGaN quantum dot photodetectors", Solid-State Electronics 47, 1753-1756 (2003).
9. Liu Xi, JIA Jin-Feng, WANG Jun-Zhong, and XUE Qi-Kun, "Growth of Co nanoclusters on Si3N4 surface formed on Si(111)", Chin. Phys. Lett. 20, 1871 (2003).
10. 焦健, 潘明虎, 薛其坤, 包信和, "硅表面纳米银团簇的氧助迁移行为", 催化学报 24, 433-436 (2003).
11. 张平,薛其坤,王玉鹏,谢心澄,"相互作用量子点中的自旋相关输运",物理 32?/b>恚?60 (2003).
12. Kehui Wu, Q. Z. Xue, R. Z. Bakhtizin, Y. Fujikawa, X. Li, T. Nagao, Qi-Kun Xue, and T. SakuraI, "layer-by-layer growth of Ag on a GaN(0001) surface", Appl. Phys. Lett. 82, 1389 (2003).
13. P. Wang, X. Gao, K. Xun, J. F. Jia, H. J. Qian, F. Q. Liu, K. Ibrahim, Y. M. Zhou, Q. K. Xue, and S. C. Wu, "Atomic and electronic structure of (?3x?3)R-30°-In phase on Cu(111)", Solid State Communications 125, 509-514 (2003).
14. L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, Q. K. Xue, W. C. Lai, Y. Z. Chiou, "A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition", Materials Letters 57, 4218 (2003).
15. Ping Zhang, Qi-Kun, Xue, Yu-Peng, Wang, and X.C. Xie, "Spin-dependent transport through an interacting quantum dot", Phys. Rev. Lett. 89, 286803 (2002).
16. Jin-Feng Jia, Xi Liu, Jun-Zhong Wang, Jian-Long Li, Mu Sun, X. S. Wang, Qi-Kun Xue, Zhi-Qiang Li, Zhenyu Zhang, and S. B. Zhang, "Fabrication and Structure of Al, Ga and In Nanocluster Two-dimensional Crystals", Phys. Rev. B66, 165412 (2002).
17. Ping Zhang, C. K. Chan, Xiang-Gui Li, Qi-Kun Xue, and Xian-Geng Zhao, "Dynamics of the spin-2 Bose condensate driven by external magnetic fields", Phys. Rev. A66, 043606 (2002).
18. Hai-Lin Sun, Jin-Feng Jia, Dingyong Zhong, Qi-Kun Xue, and E. G. Wang, "STM study of polymerized carbon nanobells: Electronic effect and evidence of nitrogen incorporation", Phys. Rev. B66, 085423 (2002).
19. 潘明虎, 薛其坤, "自旋极化扫描隧道显微术", 物理 31卷,800 (2002)
20. Ping Zhang, Qi-Kun Xue, Xian-Geng Zhao, and Xin-Cheng Xie, "Coulomb-enhanced dynamic localization and Bell state generation in a coupled quantum dot", Phys. Rev. A66, 022117 (2002).
21. H. Chen, Y. K. Li, C. S. Peng, H. F. Liu, Y. L. Liu, Q. Huang, J. M. Zhou, and Qi-Kun Xue, "Crosshatching on a SiGe film grown on a Si?001? substrate studied by Raman mapping and atomic force microscopy", Phys. Rev. B65, 233303 (2002).
22. J. F. Jia, J. L. Li, Xue-Jin Liang, Xi Liu, Jun-Zhong Wang, Hong Liu, Rui-Feng Dou, Mao-Jie Xu, Ming-Hu Pan, Shao-Chun Li, and Qi-Kun Xue, "Spontaneous fabrication of periodic identical nanocluster arrays by magic clustering process on nanostructured template", J. Chin. Electron Microscopy Soc. 21, 270 (2002).
23. J. F. Jia, Xi Liu, Shao-Chun Li, Jun-Zhong Wang, J. L. Li, Hong Liu, Ming-Hu Pan, Rui-Feng Dou, Qi-Kun Xue, Zhi-qiang Li, S. B Zhang, "Artificial metal nanocluster crystals", Modern Physics Letters B 16, 889-894 (2002).
24. "Spontaneous assembly of perfectly ordered identical-size nanocluster arrays", J. F. Jia, J. Z. Wang, Xi Liu, X. S. Wang, Q. K. Xue, Z. Q. Li, and S. B. Zhang, Nanotechnology 13, 736-740 (2002).
25. Wang Y Q, Hu G Q, Duan X F, Sun H L, Xue Q K, "Microstructure and formation mechanism of titanium dioxide nanotubes", Chem. Phys. Lett. 365, 427-431 (2002).
26. Jun-Zhong Wang, Jin-Feng Jia, Hong Liu, Shao-Chun Li, Xi Liu, and Qi-Kun Xue, "A Close View of Ordered Ga Wires Formed on Si(100) 2 x n", Phys. Rev. B65, 235303 (2002).
27. 贾金锋, 薛其坤, S. B. Zhang, "完全有序的全同金属纳米点阵列的生长与研究", 物理, 31, 265 (2002).
28. Jin-Feng Jia, Jun-Zhong Wang, Xi Liu, Qi-Kun Xue, Zhi-Qiang Li, Y. Kawazoe, and S. B. Zhang, "Artificial nanocluster crystal: lattice of identical Al clusters", Appl. Phys. Lett. 80, 3186 (2002).
29. H. Q. Jia, H. Chen, W. C. Wang, W. X. Wang, W. Li, Q. Huang, Junming Zhou, and Q. K. Xue, "Improvement of thermal stability of wet oxidized AlAs", Appl. Phys. Lett. 80, 974 (2002).
30. Jun-Zhong Wang, Jin-Feng Jia, Hong Liu, Jian-Long Li, Xi Liu, and Qi-Kun Xue, "Spontaneous Vacancy Array Formation on FeSi2 and CoSi2 Formed on Si(100) 2xn surface", Appl. Phys. Lett. 80, 1990 (2002).
31. Jian-Long Li, Jin-Feng Jia, Xue-Jin Liang, Xi Liu, Jun-Zhong Wang, Qi-Kun Xue, Zhi-Qiang Li, John S. Tse, Zhenyu Zhang, and S. B. Zhang, "Spontaneous assembly of perfectly ordered identical-size nanocluster arrays", Phys. Rev. Lett. 88, 066101 (2002).
32. P. Wang, K. Xun, Jin-Feng Jia, X. Gao, Hai-Jie Qian, Feng-Qin Liu, K. Ibrahim, Yu-Mei Zhou, Qi-Kun Xue, and Si-Cheng Wu, "Atomic and electronic structures of submonolayer In on Cu(111)", Chin. Phys. Lett. 19, 409-412 (2002).
33. WANG Qu-Quan, SHI Jing, YANG Bai-Feng, LIU Hai-Lin, XIONG Gui-Guang, GONG Qi-Huang, and XUE Qi-Kun, "A Z-scan study of LiNbO3 thin films", Chin. Phys. Lett. 19, 677 (2002).
34. Jian-Long Li, Xue-Jin Liang, Jin-Feng Jia, Xi Liu, Jun-Zhong Wang, and Qi-Kun Xue, "Spontaneous formation of ordered indium quantum wire array on Si(001)", Appl. Phys. Lett. 79, 2826 (2001).
35. H. Lu, D. H. Shen, Q. K. Xue, M. Polak, and N. Froumin, "X-ray photoelectron spectroscopy study of the metal/cermet interface", Chin. Phys. Lett. 18, 94 (2001).
36. H. Lu, D. H. Shen, X. F. Deng, Q. K. Xue, N. Froumin, and M. Polak, "Study of the Al/graphite interface", Chin. Phys. 10, 832-835 (2001).
37. Q. Z. Xue, Q. K. Xue, S. Kuwano, K. Nakayama, and T. Sakurai, "Growth mode and surface reconstruction of GaN(000-1) thin films on 6H-SiC(000-1)", Chin. Phys. 10, S157-162 (2001)
38. Q. Z. Xue, Q. K. Xue, S. Kuwano, K. Nakayama, and T. Sakurai, "N-plasma assisted molecular beam epitaxy of GaN(000-1) thin films on 6H-SiC(000-1)", Jpn. J. Appl. Phys. 40 (Part 1), 4388-4390 (2001)
39. Xu YB, Li HN, Bao SN, Li HY, Qian HJ, Liu FQ, Ibrahim K, Jia JF, Xue QK, "Synchrotron radiation angle-resolved photoemission study of the orientational phase transition for K3C60", HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS CHINESE EDITION 25, 33-38 (2001).
40. Q. K. Xue, Q. Z. Xue, S. Kuwano, K. Nakayama, T. Sakurai, T. Ohno, X. G. Qiu, and Y. Segawa, "Surface reconstructions and optical properties of Wurtzite GaN grown on 6H-SiC", J. Cryst. Growth 229, 41-47 (2001).
41. Q. K. Xue, T. Hashizume, and T. Sakurai, "Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surface", in Advances in Scanning Tunneling Microscopy, Springer Press, Chapter 8, p194-282 (2000) (Book Chapter).
42. T. Yamanaka, Q.K. Xue, K. Kimura, T. Matsushima, Y. Hasegawa, and T. Sakurai, "Observation of clean and oxygen-adsorbed Pt(113) surfaces by scanning tunneling microscopy," Jpn. J. Appl. Phys. 39, 3562-3565 (2000).
43. Q. Z. Xue, S. Kuwano, K. Nakayama, T. Sakurai, T. Ohno, and Q. K. Xue, "Molecular beam epitaxy-scanning tunneling microscopy study of Wurtzite GaN thin film growth", Trans. Mater. Res. Soc. Jpn. 25, 805-810 (2000).
44. Q. K. Xue, J. L. Li, M. Sun, H. Lu, T. Hashizume, Y. Ling, Y. Hasegawa, K. Ohno, Z. Q. Li, Y. Kawazoe, T. Sakurai, H. Kamiyama, and H. Shinohara, Science in China (Series A) 43, 1224-1232 (2000).
45. Q. K. Xue, J. L. Li, M. Sun, H. Lu, T. Hashizume, Y. Ling, Y. Hasegawa, K. Ohno, Z. Q. Li, Y. Kawazoe, T. Sakurai, H. Kamiyama, and H. Shinohara, Science in China (Series A) 30, 529-536 (2000) (in Chinese).
46. H. Lu, J. L. Li, Q. Z. Zhang, J. Qin, and Q. K. Xue, "High-purity Tansition Metal Evaporation Source for UHV", Vacuum Science and Technology (China) 20, 210-213 (2000).
47. X. G. Qiu, Y. Segawa, Q. K. Xue, Q. Z. Xue, and T. Sakurai, "Influence of threading dislocations on the near-band edge photoluminescence of wurtzite GaN thin films on SiC substrate", Appl. Phys. Lett. 77, 1316-1318 (2000)
48. Q. K. Xue, Q. Z. Xue, S. Kuwano, T. Sakurai, T. Ohno, I. S. T. Tsong, X. G. Qiu, and Y. Segawa, "Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy", Thin Solid Films 367, 149-158 (2000).
49. T. Ohno, Q. K. Xue, and T. Sakurai, "GaN surface structures, atomistic approach by first-principles simulation and STM", Jpn. Surf. Sci. 21, 134-141 (2000)
50. Q. Z. Xue, Q. K. Xue, S. Kuwano, K. F. Kelly, J. Sadowski, Y. Hasegawa, K. Nakayama, T. Sakurai, and T. Ohno, "Reply to Comments on As-induced 2x2 GaN(0001) reconstruction", Phys. Rev. Lett. 84, 4015 (2000).
51. L. Mantese, Q. K. Xue, T. Sakurai, and D. E. Aspnes, "Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy", J. Vac. Sci. Technol. A17, 1652-1656 (1999).
52. Y. Hasegawa, K. Akiyama, M. Ono, S. -J. Kahng, Q. K. Xue, K. Nakayama, T. Hashizume, and T. Sakurai, "Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy", Appl. Phys. Lett. 75, 3668 (1999).
53. Z. Gai, W. S. Yang, Q. K. Xue, T. Sakurai, and R. G. Zhao, "Scanning tunneling microscopy investigation of the Si(103)-1x1-In surface", Surf. Rev. Lett. 6, 405-409 (1999).
54. Q. Z. Xue, Q. K. Xue, R. Z. Bakhtizin, Y. Hasegawa, I. S. T. Tsong, T. Sakurai, and T. Ohno, "Atomistic investigation of various GaN(0001) phases on the 6H-SiC(0001) surface", Phys. Rev. B59, 12604-12611 (1999).
55. Q. Z. Xue, Q. K. Xue, Y. Hasegawa, I. S. T. Tsong, and T. Sakurai, "Two-step preparation of 6H-SiC(0001) surface for epitaxial growth on GaN thin film", Appl. Phys. Lett. 74, 2468 (1999).
56. Q.K. Xue, T. Hashizume, Y. Watanabe, K. Akiyama, Y. Hasegawa, and T. Sakurai, "Scanning Tunneling Microscopy of GaAs (001) Surface (II) ", Surf. Sci. 20, 358-366 (1999) (in Japanese)
57. Q.K. Xue, T. Hashizume, Y. Watanabe, K. Akiyama, Y. Hasegawa, and T. Sakurai, "Scanning Tunneling Microscopy of GaAs (001) Surface (I) ", Surf. Sci. 20, 262-271 (1999) (in Japanese).
58. Q. K. Xue, T. Hashizume, and T. Sakurai, "Scanning tunneling microscopy study of GaAs(001) surfaces", Appl. Surf. Sci. 141, 244-263 (1999).
59. Q. K. Xue, Q. Z. Xue, R. Z. Bakhtizin, Y. Hasegawa, I. S. T. Tsong, T. Sakurai, and T. Ohno, "Structures of GaN(0001) 2x2, 4x4 and 5x5 surface reconstructions", Phys. Rev. Lett. 82, 3074-3077 (1999).
60. Q. K. Xue, Y. Hasegawa, H. Kiyama, and T. Sakurai, "Atomic Structure of Faceted Planes of InAs Quantum Dots on GaAs(001) Studied by Scanning Tunneling Microscopy", Jpn. J. Appl. Phys. 38, 500-503 (1999).
61. Y. Hasegawa, H. Kiyama, Q. K. Xue, and T. Sakurai, "Structures of facetted planes of 3D InAs quantum dots on GaAs(001) studied by scanning tunneling microscopy", Appl. Phys. Lett. 72, 2265-2267 (1998).
62. Q.K. Xue and T. Sakurai, "6x2 surface reconstruction for the two-dimensional heteroepitaxial growth of InAs on GaAs", Phys. Rev. B57, R6862-R6865 (1998).
63. R. Z. Bakhtizin, Q. K. Xue, T. Sakurai, and T. Hashizume, "Aromic structures of gallium-rich GaAs(001)-4x2 and GaAs(001)-4x6 surfaces", J. Experimental and Theoretical Physics 84, 1016-1019 (1997).
64. T. Sakurai, Q. K. Xue, and Y. Hasegawa, in "Super Large-Scale Intigrated Circuits--Devices and Processing", Seminconductor research. Eds. J. Nishizawa, Volume 21, P263--P297 (1997).
65. Q.K. Xue, Y. Hasegawa, T. Ogino, H. Kiyama, and T. Sakurai, "In-rich 4x2 reconstruction in novel planar growth of InAs on GaAs(001)", J. Vac. Sci. Technol. B15, 1270-1273 (1997).
66. Q.K. Xue, T. Ogino, H. Kiyama, Y. Hasegawa, and T. Sakurai, "Surface reconstruction and morphology evolution in highly strained InAs epilayer growth on GaAs(001) surface", J. Cryst. Growth 175/176, 174-177 (1997).
67. T. Sakurai, Q.K. Xue, T. Hashizume, and Y. Hasegawa, "Extraordinary growth of C60 on a GaAs(001) As-rich 2x4 surface", J. Vac. Sci. Technol. B15, 1628-1632 (1997).
68. Q.K. Xue, Q.Z. Xue, Y. Hasegawa, I.S.T. Tsong, and T. Sakurai, "Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy", Jpn. J. Appl. Phys. 36, L1486-L1489 (1997).
69. Q.K. Xue, T. Hashizume, and T. Sakurai, "Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surface", Progress in Surface Science 56, P1-P132 (1997) (review paper).
70. H. Kiyama, Q.K. Xue, and T. Sakurai, "STM study of MBE grown III-V semiconductors", J. Korean Phys. Soc. 31, S13-S15 (1997).
71. Q.K. Xue, T. Hashizume, T. Ohno, Y. Hasegawa, T. Sakurai, "Scanning tunneling microscopy of GaAs(001)", RITU A44, 113-143 (1997).
72. X. -D. Wang, T. Hashizume, V. Yu. Yurov, Q.K. Xue, H. Shinohara, Y. Kuk, Y. Nishina, and T. Sakurai, "Two-dimensional domain boundary segregation of C60 in Cu(111)4x4-C60/C70 phase", Zeitschrift fur Physikalische Chemie, Bd. 202, S117-125 (1997).
73. Q.K. Xue, Y. Hasegawa, T. Ogino, H. Kiyama, and T. Sakurai, "In-rich 4x2 reconstruction in InAs/GaAs(001) heteroepitaxy", RITU A45, 153-156 (1997).
74. K. Ohno, Z. Q. Li, H. Kamiyama, Y. Kawazoe, Q.K. Xue, T. Ogino, Y. Hasegawa, T. Hashizume, H. Shinohara, and T. Sakurai, "Mechanism of a 13% lattice expansion in C60s on GaAs(001)-2x4", RITU A43, 61-65 (1997).
75. T. Sakurai, X.D. Wang, Q.K. Xue, Y. Hasegawa, T. Hashizume, H. Shinohara, "Scanning Tunneling Microscopy Study of Fullerenes", Progress in Surface Science 51, P263-P408 (1996) (review paper).
76. Q.K. Xue, "Scanning tunneling microscopy of molecular beam epitaxy GaAs(001)", Bull. Amer. Phys. Soc. 41, 519 (1996) (invited talk at APS).
77. Q.K. Xue, T. Ogino, Y. Hasegawa, and T. Sakurai, "C60 adsorption and film growth on GaAs(001)2x6 surfaces by molecular beam epitaxy", Phys. Rev. B53, 1985-1989 (1996).
78. Q.K. Xue, T. Ogino, Y. Hasegawa, T. Hashizume, H. Shinohara, and T. Sakurai, "Surface Geometry of MBE-grown GaAs(001) Ga-rich phases", Material Science & Engineering, A217/218, 193-197 (1996).
79. Q.K. Xue, T. Hashizume, T. Sakata, Y. Hasegawa, T. Ohno, and T. Sakurai, "Structures of molecular beam epitaxially grown GaAs(001) surface phases", Thin Solid Films 281/282, 556-561 (1996).
80. Q.K. Xue, Y. Ling, T. Ogino, T. Sakata, T. Hashizume, Y. Hasegawa, H. Shinohara, and T. Sakurai, "C60 films on GaAs(001) surface", Thin Solid Films 281/282, 618-623 (1996).
81. Q.K. Xue, T. Hashizume, T. Sakata, Y. Hasegawa, T. Ohno, and T. Sakurai, "C60 single crystal films on GaAs/InAs(001) Surface", Mater. Sci. & Eng. A217/218, 27-33 (1996).
82. Q.K. Xue, T. Hashizume, J.M. Zhou, T. Sakata, T. Ohno, and T. Sakurai, "Structures of GaAs(001) Ga-rich 4x2 and 4x6 reconstructions", Phys. Rev. Lett. 74, 3177-3180 (1995).
83. Tomihiro Hashizume, Q.K. Xue, A. Ichimiya, and Toshio Sakurai, "Determination of the surface structures of the GaAs(001)-2x4 As-rich phase", Phys. Rev. B51, 4200-4212 (1995).
84. Q.K. Xue, Tomihiro Hashizume, J.M. Zhou, T. Sakata, and Toshio Sakurai, "STM study of GaAs(001) Ga-rich 4x2/c(8x2) surface reconstruction", Appl. Surf. Sci. 87/88, 364-367 (1995).
85. A. Ichimiya, Q.K. Xue, Tomihiro Hashizume, and Toshio Sakurai, "STM study of the MBE-grown GaAs(001) 2x4 reconstructions", J. Crystal Growth 150, 136-143 (1995).
86. Tomihiro Hashizume, Q.K. Xue, A. Ichimiya, and Toshio Sakurai, "Structure of the MBE-grown GaAs(001)-2x4 phase", Appl. Surf. Sci. 87/88, 373-379 (1995).
87. C. L. Bao, H. Lu, Q. K. Xue, X. J. Zhang, and Y. D. Cui, "A study of crystallization of amorphous Cu60Zr40 alloy", Acta Physics Sinica 4, 268 (1995) (oversea edition).
88. Q.K. Xue, Junming Zhou, Tomihiro Hashizume, and Toshio Sakurai, "Improved surface morphology of the GaAs(001) surface by migration enhanced epitaxy (MEE)", J. Appl. Phys. 75, 5021-5025 (1994).
89. Tomihiro Hashizume, Q.K. Xue, J.M. Zhou, A. Ichimiya, and T Sakurai, "Structures of the As-rich GaAs(001)-(2x4) reconstructions", Phys. Rev. Lett. 73, 2208-2211 (1994).
90. Junming Zhou, Q.K. Xue, Tomihiro Hashizume, and Toshio Sakurai, "Surface ordering of the GaAs(001) surface grown by molecular beam epitaxy", Appl. Phys. Lett. 64, 583-585 (1994).
91. X.-D. Wang, Q.K. Xue, T. Hashizume, H. Shinohara, Y. Nishina, and T. Sakurai, "Scanning tunneling microscopy studies of the interaction of C70 with the Si(100)2x1 surface", Phys. Rev. B49, 7754-7758 (1994).
92. X.-D. Wang, Q.K. Xue, T. Hashizume, H. Shinohara, Y. Nishina, and T. Sakurai, "FI-STM study of the structure of Sc-encapsulated fullerenes", Appl. Surf. Sci. 76/77, 329-333 (1994).
93. X.-D. Wang, Q.K. Xue, T. Hashizume, H. Shinohara, Y. Saito, Y. Nishina, and T. Sakurai, "Thermal stability of fullerenes(C70) on the Si(100)2x1 surface studied with scanning tunneling microscopy", Appl. Surf. Sci. 76/77, 334-339 (1994).
94. X.-D. Wang, Q.K. Xue, T. Hashizume, H. Shinohara, Y. Nishina, and T. Sakurai, "Scanning tunneling microscopy study of the solid-phase Sc2C84 metallofullerene", Phys. Rev. B48, 15492-15495 (1993).
95. X.-D. Wang, T. Hashizume, Q.K. Xue, H. Shinohara, Y. Saito, Y. Nishina, and T. Sakurai, "Geometry of metallofullerenes adsorbed on the Si(100)2x1 surface studied by using scanning tunneling microscopy (STM)'', Chem. Phys. Lett. 216, 409-412 (1993).
96. X.-D. Wang, T. Hashizume, Q.K. Xue, H. Shinohara, Y. Saito, Y. Nishina, and T. Sakurai, "Field ion-Scanning tunneling microscopy of metallofullerenes adsorbed on the Si(100)2x1 surface", Jpn. J. Appl. Phys. Lett. 32, L866-L868 (1993).
97. H. Lu, C.L. Bao, Q.K. Xue, and D.S. Tang, "Clustering effect in crystallization process of CuZr amorphous alloy", Applied Physics A52, 302-306 (1991).
98. H. Lu, C.L. Bao, X.N. Yu, Q.K. Xue, D.S. Tang, P.J. Wu, and Y.Y. Xiong, "Crystallization on CuZr amorphous alloy surface: An X-ray photoelectron spectroscopy study", Physica Status Solidi (a) 122, 481-488 (1990).