Bio Information

Qi-Kun Xue
Professor, Head
 

 
Dr. Qi-Kun Xue (Professor), born in 1963, received his Ph.D in physics from Institute of Physics, CAS in 1994. From 1994 to 2001, he worked as an assistant professor with Prof. Sakurai at Institute for Materials Research, Tohoku University, Japan. During this period, he also did one year visiting research with Prof. D. E. Aspnes at North Carolina State University, USA. Currently he is the director of SKLSP and a core member of International Center of Quantum Structure, CAS. He was selected into "100 Talents Program" of CAS in1998. His main research interests are on the growth and atomic-level control of semiconductor thin film, and the novel physical properties and quantum effects in nanostructures (clusters, quantum dots/wires etc.) mainly using molecular beam epitaxy combined scanning tunneling microscopy, angle-resolved photoemission spectroscopy and surface magnetic-optical Kerr effect.
Research
 
Dr. Xue's research focuses on surface crystal structures, physical/chemical properties of thin film of various metals and semiconductors prepared by homoepitaxy and heterepitaxy, and growth dynamics and control of low-dimensional nanostructures, by using STM, HEED/LEED, optical probe and various surface analysis techniques.

His past work includes determination of surface structures of compound semiconductors such as GaAs and GaN which have extensive use in microelectronic industry, their optical properties, atomistic process and strain relaxation of strained thin film growth, the formation mechanism and stability of InAs/GaAs quantum dots, and C60/C84/C70 growth on semiconductor substrate.

His recent and future research interests include MBE growth and spin injection of dilute magnetic semiconductors, magnetism of low-dimensional nanostructures and their application in spin electronics, and the influence of quantum effects on the electronic properties of low-dimensional nanostructures (such as for catalysis). 
 
Recent Publication & Invited Talks

Review papers:

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1. Q. K. Xue, T. Hashizume, and T. Sakurai, "Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surface", in Advances in Scanning Tunneling Microscopy, Springer Press, Chapter 8, p194-282 (2000) (Book Chapter).

2. Q.K. Xue, T. Hashizume, and T. Sakurai, "Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surface", Progress in Surface Science 56, P1-P132 (1997).

3. T. Sakurai, X.D. Wang, Q.K. Xue, Y. Hasegawa, T. Hashizume, H. Shinohara, "Scanning Tunneling Microscopy Study of Fullerenes", Progress in Surface Science 51, P263-P408 (1996).

Peer-reviewed papers (selected):

1. P. Zhang, Q. K. Xue, and X. C. Xie, "Spin current through a quantum dot in the presence of an oscillating magnetic field", Phys. Rev. Lett. 91, 196602 (2003).
2. K. Wu et al., "Na adsorption on the Si(111)-7x7 surface: From two-dimensional gas to nanocluster array", Phys. Rev. Lett. 91, 126101 (2003).
3. K. Wu et al., "2D growth of Ag on GaN(0001) surface", Appl. Phys. Lett. 82, 1389 (2003).
4. Ping Zhang et al., "Quantum entanglement of excitons in coupled quantum dots", Phys. Rev. A 67, 012312 (2003).
5. Ping Zhang, Qi-Kun, Xue, Yu-Peng, Wang, and X.C. Xie, "Spin-dependent transport through an interacting quantum dot", Phys. Rev. Lett. 89, 286803 (2002).
6. Jin-Feng Jia et al., "Fabrication and structure of Al, Ga and In nanocluster two-dimensional crystals", Phys. Rev. B 66, 165412 (2002).
7. Ping Zhang et al., "Dynamics of the spin-2 Bose condensate driven by external magnetic fields", Phys. Rev. A 66, 043606 (2002).
8. Hai-Lin Sun et al., "STM study of polymerized carbon nanobells: Electronic effect and evidence of nitrogen incorporation", Phys. Rev. B 66, 085423 (2002).
9. Ping Zhang et al., "Coulomb-enhanced dynamic localization and Bell state generation in a coupled quantum dot", Phys. Rev. A 66, 022117 (2002).
10. H. Chen et al., "Crosshatching on a SiGe film grown on a Si(001) substrate studied by Raman mapping and atomic force microscopy", Phys. Rev. B 65, 233303 (2002).
11. Jun-Zhong Wang et al., "A close view of ordered Ga wires formed on Si(100) 2 x n", Phys. Rev. B65, 235303 (2002).
12. Jin-Feng Jia et al., "Artificial nanocluster crystal: lattice of identical Al clusters", Appl. Phys. Lett. 80, 3186 (2002).
13. H. Q. Jia et al., "Improvement of thermal stability of wet oxidized AlAs", Appl. Phys. Lett. 80, 974 (2002).
14. Jun-Zhong Wang et al., "Spontaneous vacancy array formation on FeSi2 and CoSi2 formed on Si(100) 2xn surface", Appl. Phys. Lett. 80, 1990 (2002).
15. Jian-Long Li et al., "Spontaneous assembly of perfectly ordered identical-size nanocluster arrays", Phys. Rev. Lett. 88, 066101 (2002).
16. Jian-Long Li et al., "Spontaneous formation of ordered indium quantum wire array on Si(001)", Appl. Phys. Lett. 79, 2826-2828 (2001).
17. Q. K. Xue, T. Hashizume, and T. Sakurai, "Scanning tunneling microscopy of III-V compound semiconductor (001) surface", in Advances in Scanning Tunneling Microscopy, Springer Press, Chapter 8, p194-282 (2000) (Book Chapter).
18. X. G. Qiu et al., "Influence of threading dislocations on the near-band edge photoluminescence of wurtzite GaN thin films on SiC substrate", Appl. Phys. Lett. 77, 1316-1318 (2000).
19. Q. Z. Xue et al., "Reply to comments on As-induced 2x2 GaN(0001) reconstruction", Phys. Rev. Lett. 84, 4015-4018 (2000).
20. Y. Hasegawa et al., "Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy", Appl. Phys. Lett. 75, 3668-3670 (1999).
21. Q. Z. Xue et al., "Atomistic investigation of various GaN(0001) phases on the 6H-SiC(0001) surface", Phys. Rev. B 59, 12604-12611 (1999).
22. Q. Z. Xue et al., "Two-step preparation of 6H-SiC(0001) surface for epitaxial growth on GaN thin film", Appl. Phys. Lett. 74, 2468-2470 (1999).
23. Q. K. Xue et al., "Structures of GaN(0001) 2x2, 4x4 and 5x5 surface reconstructions", Phys. Rev. Lett. 82, 3074-3077 (1999).
24. Y. Hasegawa et al., "Structures of facetted planes of 3D InAs quantum dots on GaAs(001) studied by scanning tunneling microscopy", Appl. Phys. Lett. 72, 2265-2267 (1998).
25. Q. K. Xue and T. Sakurai, "6x2 surface reconstruction for the two-dimensional heteroepitaxial growth of InAs on GaAs", Phys. Rev. B 57, R6862-R6865 (1998).
26. Q. K. Xue, T. Hashizume, and T. Sakurai, "Scanning tunneling ticroscopy of III-V compound semiconductor (001) surface", Progress in Surface Science 56, P1-P132 (1997) (review paper).
27. T. Sakurai, X.D. Wang, Q.K. Xue, et al., "Scanning tunneling microscopy study of fullerenes", Progress in Surface Science 51, P263-P408 (1996) (review paper).
28. Q. K. Xue et al., "C60 adsorption and film growth on GaAs(001)2x6 surfaces by molecular beam epitaxy", Phys. Rev. B 53, 1985-1989 (1996).
29. Q. K. Xue et al., "Structures of GaAs(001) Ga-rich 4x2 and 4x6 reconstructions", Phys. Rev. Lett. 74, 3177-3180 (1995).
30. T. Hashizume, Q. K. Xue, A. Ichimiya, and Toshio Sakurai, "Determination of the surface structures of the GaAs(001)-2x4 As-rich phase", Phys. Rev. B 51, 4200-4212 (1995).
31. T. Hashizume, Q. K. Xue, J. M. Zhou, A. Ichimiya, and T Sakurai, "Structures of the As-rich GaAs(001)-(2x4) reconstructions", Phys. Rev. Lett. 73, 2208-2211 (1994).
32. J. M. Zhou, Q. K. Xue, Tomihiro Hashizume, and Toshio Sakurai, "Surface ordering of the GaAs(001) surface grown by molecular beam epitaxy", Appl. Phys. Lett. 64, 583-585 (1994).
33. X.-D. Wang, Q. K. Xue et al., "Scanning tunneling microscopy studies of the interaction of C70 with the Si(100)2x1 surface", Phys. Rev. B 49, 7754-7758 (1994).
34. X.-D. Wang, Q.K. Xue et al., "Scanning tunneling microscopy study of the solid-phase Sc2C84 metallofullerene", Phys. Rev. B 48, 15492-15495 (1993).  

Invited Talks (selected):

1.        ¡°Growth and Research on the Identical Metal Quantum Dots Array on Semiconductor Underlayers¡±, The 13th National Annual Conference on Semiconductor Physics, Suzhou, Oct 26-19, 2001.

2.       ¡°Growth of ordered arrays of identical metal nanoclusters with tunable sizes and compositions on Si(111)¡±£¬The 1st Asia Symposium on Nanoscience and Nanotechnology, Tokyo, Japan, Oct. 9-11, 2001.

3.        ¡°Perfectly ordered nano-dot arrays on Si(111)¡±, The 1st International Workshop on Nanoscience and Nanotechnology¡±, Sendai, Japan, June 15-16, 2001.

4.        ¡°Periodic nanostructure arrays on Si(111) and Si(100) studied by scanning tunneling microscopy and first-principles theoretical calculation¡±, The 3rd International Conference on Scanning Tunneling Microscopy, Sensors and Nanostructures, Chiba, Japan, May 27-31, 2001.

5.        ¡°Spontaneous Formation of Identical Nanodots and nanowires on Si¡±, The 1st International Workshop on Surface Science and Nanomagnetism, Shanghai, China, May 27-28, 2001.

6.        ¡°Atomistic Study of GaN Thin Film Growth on 6H-SiC Substrate¡±, The 3rd Asia Symposium on Scanning Tunneling Microscopy¡±, Shizuoka, Dec. 11-13, 2000.

7.        ¡°Exploring GaN surface reconstructions¡±, Invited Talk at The 11th International Conference on Molecular Beam Epitaxy, Beijing, Sept. 11-15, 2000.

8.        ¡°GaN Epitaxial Growth by Scanning Tunneling Microscopy and First-principle theory¡±, Invited Talk at 1st Asia Crystal Material and Technology, Sendai, Japan, Aug. 28-Sept.1, 2000.

9.        ¡°STM study of Wurtzite GaN Surface Reconstructions¡±, Invited Talk at The Annual Meeting of Japanese Materials Research Society, Tokyo, Japan, Dec. 17, 1999.

10.     ¡°MBE-STM study of GaN heteroepitaxy on 6H-SiC¡±, Invited Talk at The 9th China National Conference on Surfaces and Interfaces, Hongzhou, China, Oct. 31-Nov.2, 1999.

11.     ¡°Exploring Wurtzite GaN Surface Reconstructions¡±, Invited Talk at The 10th International Conference on Scanning Tunneling Microscopt/Spectroscopy¡±, Seoul, Korea, July 19-23, 1999.

12.     ¡°Molecular beam epitaxy-scanning tunneling microscopy of GaN surface reconstructions¡±, Invited Talks at 5th International Conference on Advanced Materials (IUMRS), Beijing, China, June 13-18, 1999.

13.     ¡°MBE-STM study of GaN heteroepitaxy on 6H-SiC¡±, Invited Talk at The 3rd International Workshop on MBE, Warsaw, Poland, May 23-28, 1999.

14.     ¡°MBE-STM Study of InAs/GaAs Heteroepitaxy¡±, Invited Talk at The 1st International Conference on Life Science and Materials, Harima, Japan, Oct. 26-29, 1997.

15.     Scanning tunneling microscopy of molecular beam epitaxy GaAs¡±, Invited Talks at American Physical Society March Meeting, St. Louis, USA, March 14-19, 1996.