Tel: +86 10 8264 9814

Fax: +86 10 8264 9228

Email: lchen@iphy.ac.cn

Dr. Lan CHEN, was born in Hunan province of China on Oct. 1978. He got his M. S and Ph. D degrees from University of Science and Technology of China on 2001 and 2007, respectively. He used to work as a research assistant in Department of Physics, Hong Kong University of Science and Technology from May 2004 to Feb. 2005. Then he went to Nanoscience and Nanotechnology Initiative in National University of Singapore and worked with Prof. Andrew Wee as a postdoc fellow. After postdoc works, he came back to China, joined to National key Lab for Surface Physics, Institute of Physics, became to an associate professor.

Dr. Lan CHEN mainly focus on researches of the preparation of low dimensional systems as well as their physical properties. At present he researched how to manipulate and control the structures and physical properties of novel low dimensional (1D or 2D) materials at atomic scale. His notable works in past several years are (1) the successful growth and characterization of silicene on metal surface; (2) the construction of two dimensional organic superstructure with dispersed electronic states; (3) the manipulation of physical properties, such as charge transport and magnetism, of single molecules. These researches generate high impacts. Among the 28 peer-reviewed articles published, 16 are published in journals with a high impact factor >7, including 5 paper published in Physical Reviews Letters, 2 in Nano Letters, 1 in Advanced Materials, and 2 in ACS Nano. The publications have been cited by >850 times. Because of the outstanding research achievements, He was awarded the Singapore Millennium Foundation Scholarship (PDF) in 2008. In 2013, Dr. Chen has been supported by the National Science Funds for Outstanding Young Scientists.

Selected publications:

(1). B. Feng, H. Li, C. C. Liu, T. N. Shao, P. Cheng, Y. G. Yao, S. Meng, L. Chen*, K. H. Wu, ACS Nano,

(2). L. Chen, C. C. Liu, B. Feng et al., Phys. Rev. Lett. 110, 229702 (2013).

(3). L. Chen, B. Feng, K. H. Wu, Appl. Phys. Lett. 102, 081602 (2013).

(4). L. Chen, H. Li, B. Feng et al., Phys. Rev. Lett. 110, 085504 (2013).

(5). L. Chen, C. C. Liu, B. Feng et al., Phys. Rev. Lett. 109, 056804 (2012).

(6). B. Feng, Z. J. Ding, S. Meng, Y. G. Yao, X. Y. He, P. Cheng, L. Chen*, K. H. Wu, Nano Lett. 12, 3507 (2012)

(7). J. T. Sun, L. Chen*, A. T. S. Wee, Appl. Phys. Lett. 99, 143122 (2011).

(8). L. Chen*, H. Li, A. T. S. Wee, Phys. Rev. Lett. 105, 226103 (2010)

(9). L. Chen*, H. Li, A. T. S. Wee, Nano Lett. 9, 4292(2009).

(10). L. Chen*, H. Li, A. T. S. Wee, ACS Nano 3, 3684(2009).

(11). L. Chen, W. Chen et al., Adv. Mater. 20, 484 (2008).

(12). L. Chen, Z. P. Hu et al., Phys. Rev. Lett. 99, 146803(2007).

(13). A. D. Zhao, Q. X. Li, L. Chen et al., Science 309,1542(2005).