Tel: +86 10 8264 8130

Fax: +86 10 8264 9228

Email: khwu@iphy.ac.cn

Education: 
Sept. 1991 – Jul. 1995:   Department of Physics, Zhejiang University, Hanzhou, China. B.S. in Condense Matter Physics, July 1995.
Jul. 1995 – Feb. 2000:      Institute of Physics, Chinese Academy of Sciences, Beijing.  Ph.D. in Condense Matter Physics, February 2000, Advisor: Prof. E.G. Wang.

Research Experience:
Apr. 2000 – Sept. 2004: Postdoc/Research Associate, Institute of Materials Research, Tohoku University, Japan
Oct. 2004 – present: Professor, Institute of Physics, Chinese Academy of Science

Current Research Interest:
(1) New techniques and systems of STM, nc-AFM and integrated optical spectroscopy.
(2) Layered materials (Topological insulators, silicene): MBE growth and electronic properties studied by low temperature STM/STS.

Selected Publications:
1. Baojie Feng, Hui Li, Cheng-Cheng Liu, Tingna Shao, Peng Cheng, Yugui Yao, Sheng Meng, Lan Chen and Kehui Wu* , Observation of Dirac Cone Warping and Chirality Effects in Silicene, ACS Nano, 7, 9049((2013).
2. Lan Chen, Hui Li, Baojie Feng, Zijing Ding, Jinglan Qiu, Peng Cheng, Kehui Wu* and Sheng Meng, Spontaneous Symmetry Breaking and Dynamic Phase Transition in Monolayer Silicene, Phys. Rev. Lett. 110, 085504 (2013). 
3. C. J. Lin, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder, W. M. Yang, T. Guan, Q. M. Zhang, L. Gu, G. Y. Zhang, C. G. Zeng, X. Dai, K. H. Wu, and Y. Q. Li, Parallel field magnetoresistance in topological insulator thin films, Phys. Rev. B 88, 041307 (2013).
4. Lan Chen, Baojie Feng, and Kehui Wu*, Observation of a possible superconducting gap in silicene on Ag(111) surface, Appl. Phys. Lett. 102, 081602 (2013).
5. Lan Chen, Cheng-Cheng Liu, Baojie Feng, Xiaoyue He, Peng Cheng, Zijing Ding, Sheng Meng, Yugui Yao, and Kehui Wu*, Evidence for Dirac Fermions in a Honeycomb Lattice Based on Silicon, Phys. Rev. Lett. 109, 056804(2012).
6. Baojie Feng, Zijing Ding, Sheng Meng, Yugui Yao, Xiaoyue He, Peng Cheng, Lan Chen, and Kehui Wu, Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111), Nano Letters 12,3507(2012). 
7. G.H. Zhang, H.J. Qin, J. Chen, X.Y. He, Y.Q. Li and K.H. Wu*, Growth of topological insulator Bi2Se3 thin films on SrTiO3 with large gate-voltage-tunable chemical potential, Adv. Func. Mater. 21, 2351(2011).
8. J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu*, Y. Q. Li*, and L. Lu, Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bi2Se3, Phys. Rev. Lett. 105, 176602(2010).
9. Huajun Qin, Yi Gao, Jing Teng, Hongxing Xu, Kehui Wu* and Shiwu Gao, A laterally tunable plasmon resonance in supported bi-atomic-layer Ag nanodisks, Nano Letters 10, 2961( 2010).
10. Guanhua Zhang, Huajun Qin, Jing Teng, Jiandong Guo, Qinlin Guo, Xi Dai, Zhong Fang, and Kehui Wu*, Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3, Appl. Phys. Lett. 95, 053114 (2009).